J 2018

Study of the Silicon Detectors for Time-of-Flight Measurements at the Super-FRS Facility and Expert Experiments at FAIR

KOSTYLEVA, D., O. KISELEV, Andrey BEZBAKH, Vratislav CHUDOBA, V. EREMIN et. al.

Basic information

Original name

Study of the Silicon Detectors for Time-of-Flight Measurements at the Super-FRS Facility and Expert Experiments at FAIR

Authors

KOSTYLEVA, D. (643 Russian Federation), O. KISELEV (643 Russian Federation), Andrey BEZBAKH (643 Russian Federation, belonging to the institution), Vratislav CHUDOBA (203 Czech Republic, guarantor, belonging to the institution), V. EREMIN (643 Russian Federation), A. FOMICHEV (643 Russian Federation), A. GORSHKOV (643 Russian Federation), S. KRUPKO (643 Russian Federation), I. MUKHA (643 Russian Federation), Ivan MUZALEVSKII (643 Russian Federation, belonging to the institution), C. SCHEIDENBERGER (643 Russian Federation) and P. SHAROV (643 Russian Federation)

Edition

Acta Physica Polonica B, 2018, 0587-4254

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

21100 2.11 Other engineering and technologies

Country of publisher

Poland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

RIV identification code

RIV/47813059:19240/18:A0000362

Organization unit

Faculty of Philosophy and Science in Opava

UT WoS

000431356200038

Keywords in English

beam diagnostics; separator; silicon detector; detector: time characteristics; FAIR

Tags

International impact, Reviewed

Links

LM2015049, research and development project. LTT17003, research and development project.
Změněno: 5/4/2019 16:11, RNDr. Jan Hladík, Ph.D.

Abstract

V originále

An important part of the beam diagnostics of the future superconducting Super-FRS fragment separator at FAIR will be the time-of-flight measurement. The tests of radiation-hard silicon detectors for such measurements at the Super-FRS and the EXPERT project within the Super-FRS Experiment Collaboration are presented. The main part of the current work is devoted to an investigation of the time characteristics of silicon detectors under the irradiation caused by intermediate energy Xe and C beams. The time resolution, obtained for the detector prototypes irradiated with Xe, reaches down to 20 ps, for C ions to 100 ps. These results are presented and discussed.